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1 cgh40006p 6 w, rf power gan hemt crees cgh40006p is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt). the cgh40006p, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of rf and microwave applications. gan hemts offer high effciency, high gain and wide bandwidth capabilities making the cgh40006p ideal for linear and compressed amplifer circuits. the transistor is available in a solder-down, pill package. re v 3.0 C ma y 2015 features ? up to 6 ghz operation ? 13 db small signal gain at 2.0 ghz ? 11 db small signal gain at 6.0 ghz ? 8 w typical at p in = 32 dbm ? 65 % effciency at p in = 32 dbm ? 28 v operation applications ? 2-way private radio ? broadband amplifers ? cellular infrastructure ? test instrumentation ? class a, ab, linear amplifers suitable for ofdm, w-cdma, edge, cdma waveforms package types: 440109 pns: cgh40006p subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units conditions drain-source voltage v dss 84 volts gate-to-source voltage v gs -10, +2 volts storage temperature t stg -65, +150 operating junction temperature t j 225 maximum forward gate current i gmax 2.1 ma maximum drain current 1 i dmax 0.75 a soldering temperature 2 t s 245 thermal resistance, junction to case 3 r jc case operating temperature 3 t c -40, +150 2sxi 1 current limit for long term, reliable operation 2 refer to the application note on soldering at gviigsq6(sgqirx0mfvev 3 measured for the cgh40006p at p diss = 8 w. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 2.1 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 28 v, i d = 100 ma saturated drain current i ds 1.7 2.1 C a v ds = 6.0 v, v gs = 2.0 v (vemr7svgivieohsrspxeki v br 120 C C v dc v gs = -8 v, i d = 2.1 ma rf characteristics 2 (t c = 25 ? c, f 0 = 2.0 ghz unless otherwise noted) small signal gain g ss 11.5 13 C db v dd = 28 v, i dq = 100 ma power output at p in = 32 dbm p out 7.0 C w v dd = 28 v, i dq = 100 ma (vemr)jgmirg 3 53 65 C % v dd = 28 v, i dq = 100 ma, p in = 32 dbm output mismatch stress vswr C C y no damage at all phase angles, v dd = 28 v, i dq = 100 ma, p in = 32 dbm dynamic characteristics input capacitance c gs C 3.0 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance c ds C 1.1 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz iihfegoetegmxergi c gd C 0.1 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz 2sxiw 1 1iewvihsrejivtvmsvxstegoekmrk 2 measured in CGH40006P-AMP. 3 (vemr)jgmirg4 out 4 dc cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance small signal gain vs frequency at 28 v input & output return losses vs frequency of the cgh40006p in the CGH40006P-AMP 28 v of the cgh40006p in the CGH40006P-AMP small signal gain vs frequency at 20 v input & output return losses vs frequency at of the cgh40006p in the CGH40006P-AMP 20 v of the cgh40006p in the CGH40006P-AMP 12 14 16 18 20 gai n ( d b ) s-parameter 28 v 0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 gai n ( d b ) frequency (ghz) -8 -6 -4 -2 0 gai n ( d b ) s-parameter 28 v -20 -18 -16 -14 -12 -10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 gai n ( d b ) frequency (ghz) s11 s22 12 14 16 18 20 gai n ( d b ) s-parameter 20 v 0 2 4 6 8 10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 gai n ( d b ) frequency (ghz) -8 -6 -4 -2 0 gai n ( d b ) s-parameter 20 v -20 -18 -16 -14 -12 -10 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 gai n ( d b ) frequency (ghz) s22 s11 cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical performance power gain vs output power as a function of frequency of the cgh40006p in the CGH40006P-AMP v dd = 28 v, i dq = 100 ma drain effciency vs output power as a function of frequency of the cgh40006p in the CGH40006P-AMP v dd = 28 v, i dq = 100 ma 12 14 16 18 20 gai n ( d b ) gain vs output power, 2,3,4,5 & 6 ghz 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz 0 2 4 6 8 10 20 25 30 35 40 gai n ( d b ) output power (dbm) 0% 10% 20% 30% 40% 50% 60% 70% 20 25 30 35 40 d r a i n e f f i c i e n c y output power (dbm) eff vs pout, 2,3,4,5 7 6 ghz 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance power gain vs frequency of the cgh40006p power gain vs frequency of the cgh40006p in the CGH40006P-AMP at p in = 32 dbm, v dd = 28 v in the CGH40006P-AMP at p in = 30 dbm, v dd = 20 v output power vs frequency of the cgh40006p output power vs frequency of the cgh40006p in the CGH40006P-AMP at p in = 32 dbm, v dd = 28 v in the CGH40006P-AMP at p in = 30 dbm, v dd = 20 v drain effciency vs frequency of the cgh40006p drain effciency vs frequency of the cgh40006p in the CGH40006P-AMP at p in = 32 dbm, v dd = 28 v in the CGH40006P-AMP at p in = 30 dbm, v dd = 20 v 6 7 8 9 10 gai n ( d b ) gain @ pin 32 dbm 0 1 2 3 4 5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) 8 10 12 ou t p u t po w er ( w ) power (w) @ pin 32 dbm 0 2 4 6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ou t p u t po w er ( w ) frequency (ghz) 6 7 8 9 10 gai n ( d b ) power gain 20v-pin30dbm 0 1 2 3 4 5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 gai n ( d b ) frequency (ghz) 8 10 12 ou t p u t po w er ( w ) pout @ 20v 0 2 4 6 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 ou t p u t po w er ( w ) frequency (ghz) 40% 50% 60% 70% d r ai n ef f i ci en cy eff @ pin 32 dbm 0% 10% 20% 30% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 d r ai n ef f i ci en cy frequency (ghz) 40% 50% 60% 70% d r ai n ef f i ci en cy eff @ 20v, pin =30 dbm 0% 10% 20% 30% 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 d r ai n ef f i ci en cy frequency (ghz) cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 typical performance third order intermodulation distortion vs average output power as a function of frequency of the cgh40006p in the CGH40006P-AMP v dd = 28 v, i dq = 60 ma simulated maximum available gain and k factor of the cgh40006p v dd = 28 v, i dq = 100 ma -20.0 -10.0 0.0 i m 3 ( d b c) im 3 vs. total output power 2.0 ghz 3.0 ghz 4.0 ghz 5.0 ghz 6.0 ghz -60.0 -50.0 -40.0 -30.0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 i m 3 ( d b c) output power (dbm) mag (db) k factor cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 typical noise performance simulated minimum noise figure and noise resistance vs frequency of the cgh40006p v dd = 28 v, i dq = 100 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a > 250 v jedec jesd22 a114-d charge device model cdm 1 < 200 v jedec jesd22 c101-c minimum noise figure (db) noise resistance (ohms) cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 source and load impedances frequency (mhz) z source z load 1000 n 61.5 + j47.4 2000 4.78 + j1.78 n 3000 n 12.57 + j23.1 4000 3.54 - j14.86 n 5000 4.42 - j25.8 n 6000 7.1 - j42.7 n note 1. v dd = 28v, i dq q%mrxlitegoeki note 2. optimized for power gain, p sat and pae. note 3. when using this device at low frequency, series resistors should be wihxsqemrxemreqtpmivwxefmpmx cgh40006p power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). d z source z load g s cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 CGH40006P-AMP demonstration amplifer circuit bill of materials designator description qty r1 6)7%-23lqwxspivergi 1 r2 6)7%-23lqwxspivergi 1 r3 6)7%-23lqwxspivergi 1 c1 %4tt%87 1 c2 %4tt%87 1 c10 %4tt%87 1 c4,c11 %4t%87 2 c6,c13 %4t 2 c7,c14 cap, 33000 pf, cer, 100v, x7r, 0805 2 c8 cap, 10 uf, 16v, smt, tantalum 1 c15 %4)6<6 1 c16 cap, 33 uf, 100v, elect, fk, smd 1 j3,j4 conn, sma, str, panel, jack, recp 2 j1 header rt>plz .1cen lk 5pos 1 - pcb, ro5880, 20 mil 1 q1 cgh40006p 1 CGH40006P-AMP demonstration amplifer circuit cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 CGH40006P-AMP demonstration amplifer circuit schematic CGH40006P-AMP demonstration amplifer circuit outline cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 typical package s-parameters for cgh40006p (small signal, v ds = 28 v, i dq = 100 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 18.30 120.62 0.023 35.87 0.456 -52.76 600 mhz 113.31 0.025 700 mhz 0.877 -117.55 14.76 0.026 0.408 -64.31 800 mhz 0.867 -125.66 13.37 101.43 0.027 1, 0.860 -132.61 0.028 16.05 0.381 -73.11 1.0 ghz 0.854 -138.66 11.18 0.028 12.66 0.374 -76.87 1.1 ghz 10.31 0.028 0.368 -80.34 1.2 ghz 0.845 -148.73 0.028 0.366 -83.57 1.3 ghz 0.842 -153.01 0.028 4.46 0.365 -86.61 1.4 ghz 8.33 76.84 0.028 2.22 0.365 1.5 ghz 0.837 7.82 73.56 0.028 0.15 0.367 1.6 ghz 0.835 -163.81 7.37 70.40 0.028 -1.75 1.7 ghz 0.833 67.36 0.028 -3.51 0.373 1.8 ghz 0.832 6.60 64.41 0.028 -5.15 0.376 +, 0.830 -172.62 6.27 61.54 0.028 -6.67 0.381 -102.27 2.0 ghz -175.27 58.74 0.028 -8.08 0.386 -104.58 2.1 ghz 0.828 -177.81 5.71 56.00 0.028 -106.84 2.2 ghz 0.827 5.46 53.32 0.027 -10.61 2.3 ghz 0.826 177.38 5.24 50.68 0.027 -11.73 0.401 2.4 ghz 0.825 175.07 5.03 0.027 -12.77 0.407 2.5 ghz 0.824 172.82 4.84 45.53 0.027 -13.71 0.412 -115.36 2.6 ghz 0.823 170.61 4.67 43.00 0.026 -14.57 0.418 -117.38 2.7 ghz 0.821 168.44 4.51 40.50 0.026 -15.34 0.423 2.8 ghz 0.820 166.30 4.36 38.02 0.026 -16.02 0.428 -121.32 +, 164.18 4.22 35.57 0.026 -16.62 0.434 -123.24 3.0 ghz 0.818 162.08 33.13 0.026 -17.13 -125.13 3.2 ghz 0.816 3.85 28.31 0.025 -128.84 3.4 ghz 0.813 153.76 3.65 23.53 0.025 -18.30 0.458 -132.46 3.6 ghz 0.810 3.47 18.78 0.025 -18.38 0.467 -136.00 3.8 ghz 0.807 145.35 3.31 14.05 0.024 -18.13 0.474 4.0 ghz 0.804 141.05 3.18 0.024 -17.60 0.481 4.2 ghz 0.801 136.66 3.05 4.57 0.024 -16.82 0.488 -146.30 4.4 ghz 132.15 -0.20 0.025 4.6 ghz 127.50 2.85 -5.01 0.025 -14.87 -153.02 4.8 ghz 122.70 2.76 0.026 0.500 -156.37 5.0 ghz 0.785 117.72 2.68 0.027 -13.04 0.503 5.2 ghz 0.780 112.55 2.62 -12.42 0.504 -163.14 5.4 ghz 0.776 107.17 2.55 -24.86 0.030 -12.13 0.505 5.6 ghz 0.772 101.58 2.50 -30.03 0.032 -12.22 0.504 -170.10 5.8 ghz 0.768 2.44 -35.30 0.035 -12.75 0.503 -173.70 6.0 ghz 0.764 2.40 0.037 -13.73 0.501 -177.41 to download the s-parameters in s2p format, go to the cgh40006p 4vshgx4ekierhgpmgosrxlihsgqirxexmsrxef cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 product dimensions cgh40006p (package type 440109) cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
13 product ordering information order number description unit of measure image cgh40006p gan hemt each cgh40006p-tb test board without gan hemt each CGH40006P-AMP test board with gan hemt installed each cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
14 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, wireless devices 1.919.287.7816 tom dekker sales director cree, wireless devices 1.919.313.5639 cgh40006p rev 3.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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